Fabrication Process Design of Dislocation-Free Semiconductor Devices by Using Stress Singularity Parameters.
نویسندگان
چکیده
منابع مشابه
Process Development for the Fabrication of Semiconductor Devices and Circuits Using Spin-On Dopant
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ژورنال
عنوان ژورنال: Journal of the Society of Materials Science, Japan
سال: 2001
ISSN: 1880-7488,0514-5163
DOI: 10.2472/jsms.50.303